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| CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip (MFC) which integrates a LO buffer amplifier and a subharmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable both for up-conversion and down-conversion. It is designed for a wide range of applications, typically commercial communication systems for broadband local access (LMDS). The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features * * * * * * * Broadband performances : 25-32GHz 11dB conversion Loss 15dBc image rejection +5dBm LO input power +5dBm input power (1dB gain comp.) Low DC power consumption, 55mA@3.5V Chip size : 2.06 x 1.25 x 0.10 mm Main Characteristics Tamb. = 25C Parameter Min Typ Max Unit FRF FLO FIF Lc RF frequency range LO frequency range IF frequency range Conversion Loss 25 12 0.1 11 32 15.5 3 15 GHz GHz GHz dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHM12912266 - 23-Sept.-02 1/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 25-32GHz SSB Mixer Electrical Characteristics for Broadband Operation Tamb = +25C, Vd = 3.5V Id=55mA Symbol FRF FLO FIF Lc PLO CHM1291 Parameter RF frequency range LO frequency range IF frequency range Conversion Loss LO Input power Min 25 12 0.1 Typ Max 32 15.5 3 Unit GHz GHz GHz dB dBm 11 +5 -35 10 -2 15 +1 +3 +9 2.0:1 2.0:1 2.0:1 2.6 55 15 2xLO Leak 2xLO Leakage (for PLO=+5dBm) Img Rej P1dB P03 IP3 LO Match RF Match IF Match Sz Id Image Rejection (1) Input power at 1dB gain compression Input power at 3dB gain compression Input 3 order intercept point LO VSWR RF VSWR IF VSWR Chip size Bias current rd -30 dBm dBc dBm dBm dBm mm mA (1) With external quadrature hybrid coupler (reference on request). The minimal value depends on the quality of the external quadrature combiner. Current source biasing network is recommended. A bonding wire of typically 0.1 to 0.15 nH will improve the accesses matching. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Ta Tstg Drain bias voltage Drain bias current Operating temperature range Storage temperature range Parameter Values 4.0 100 -40 to +85 -55 to +155 Unit V mA C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHM12912266 - 23-Sept.-02 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 25-32GHz SSB Mixer CHM1291 Typical On-wafer Measurements in Up-Conversion mode with external IF quadrature combiner Bias conditions: Tamb = +25C, Vd = 3.5V, Id = 55mA Up-Conversion supradyne mode with external combiner P LO = +5dBm F LO = 14GHz Up-Conversion infradyne mode with external combiner P LO = +5dBm F LO = 14GHz 32 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 -40 -44 1,5 32 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 -40 -44 1,5 Conv. Loss (dB), LO & 2xLO leakage (dBm) CL sup ( dB ) Img Supp ( dBc ) P 2xLO @ RF ( dBm ) CL inf ( dB ) P LO @ RF ( dBm ) Conv. Loss (dB), LO & 2xLO leakage (dBm) CL sup ( dB ) Img Supp ( dBc ) P 2xLO @ RF ( dBm ) CL inf ( dB ) P LO @ RF ( dBm ) 1,7 1,9 2,1 2,3 2,5 1,7 1,9 2,1 2,3 2,5 IF Frequency (GHz) IF Frequency (GHz) 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 -34 -38 -42 -46 -50 -54 12 Up-Conversion supradyne mode with external combiner P LO = +5dBm F IF = 2,0GHz CL sup ( dB ) Img Supp (dBc) P 2xLO @ RF ( dBm ) CL inf ( dB ) P LO @ RF ( dBm ) 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 -34 -38 -42 -46 -50 -54 12 Up-Conversion infradyne mode with external combiner P LO = +5dBm F IF = 2,0GHz Conv. Loss (dB), LO & 2xLO leakage (dBm) Conv. Loss (dB), LO & 2xLO leakage (dBm) CL sup ( dB ) Img Supp (dBc) P 2xLO @ RF ( dBm ) CL inf ( dB ) P LO @ RF ( dBm ) 12,5 13 13,5 14 14,5 LO Frequency (GHz) 15 15,5 16 12,5 13 13,5 14 14,5 LO Frequency (GHz) 15 15,5 16 Typical On-wafer Compression Measurements in Up-Conversion mode with external IF quadrature combiner Bias conditions: Tamb = +25C, Vd = 3.5V, Id = 55mA -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Up-Conversion Sup. mode with external combiner LO = 14GHz P LO = +5dBm F IF = 2,0GHz (RF = 30GHz) -2 -4 Up-Conversion Inf. mode with external combiner LO = 14GHz P LO = +5dBm F IF = 2,0GHz (RF = 26GHz) Output power & Conv. Loss (dBm & dB) Output power & Conv. Loss (dBm & dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -20 -18 -16 -14 -12 P RF 30GHz CL 30GHz P RF 26GHz CG 26GHz -10 -8 -6 -4 -2 0 2 4 6 IF Input power (dBm) IF Input power (dBm) Ref. : DSCHM12912266 - 23-Sept.-02 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 25-32GHz SSB Mixer CHM1291 Typical On-wafer Measurements in Down-Conversion mode with external IF quadrature combiner Bias conditions: Tamb = +25C, Vd = 3.5V, Id = 55mA Down-Conversion mode with external combiner P LO = +5dBm F LO = 12GHz Down-Conversion mode with external combiner P LO = +5dBm F LO = 14GHz -6 -8 -10 -12 -6 -8 -10 -12 Conversion Loss (dB) Conversion Loss (dB) -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 CL I Sup ( dB ) CL Q Sup ( dB ) F LO CL I Inf ( dB ) CL Q Inf ( dB ) CL I Sup ( dB ) CL Q Sup ( dB ) F LO CL I Inf ( dB ) CL Q Inf ( dB ) -34 21,5 22,0 22,5 23,0 23,5 24,0 24,5 25,0 25,5 26,0 26,5 25,5 26,0 26,5 27,0 27,5 28,0 28,5 29,0 29,5 30,0 30,5 RF Frequency (GHz) RF Frequency (GHz) Down-Conversion mode with external combiner P LO = +5dBm F LO = 16GHz -6 -8 -10 -12 Conv. Loss (dB), LO & 2xLO leakage (dBm) -6 -10 -14 -18 -22 -26 -30 -34 -38 -42 -46 -50 -54 12 Down-Conversion mode with external combiner P LO = +5dBm F IF = 2,0GHz Conversion Loss (dB) -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 29,5 30,0 30,5 31,0 31,5 32,0 32,5 33,0 33,5 34,0 34,5 CL I Sup ( dB ) CL Q Sup ( dB ) F LO CL I Inf ( dB ) CL Q Inf ( dB ) CL I Sup ( dB ) CL Q Sup ( dB ) P LO @ RF ( dBm ) CL I Inf ( dB ) CL Q Inf ( dB ) P 2xLO ( dBm ) 12,5 13 13,5 14 14,5 LO Frequency (GHz) 15 15,5 16 RF Frequency (GHz) Typical On-wafer Measurements in Down-Conversion mode without external IF quadrature combiner Bias conditions: Tamb = +25C, Vd = 3.5V, Id = 55mA Down-Conversion Sup. mode without external combiner F LO = 13GHz P LO = +5dBm F RF = 26 to 33GHz -10 -14 -18 -10 -14 -18 Down-Conversion Inf. mode without external combiner F LO = 15GHz P LO = +5dBm F RF = 23 to 29GHz Conv. Loss (dB) LO & 2LO leakage (dBm) -22 -26 -30 -34 -38 -42 -46 -50 -54 -58 0 1 2 3 4 5 6 7 Conv. Loss (dB) LO & 2LO leakage (dBm) -22 -26 -30 -34 -38 -42 -46 -50 -54 -58 0 1 2 3 4 5 6 7 CL I Sup ( dB ) P LO @ IF ( dBm ) CL Q Sup ( dB ) P 2XLO @ IF ( dBm ) CL I Inf ( dB ) P LO @ IF ( dBm ) CL Q Inf ( dB ) P 2XLO @ IF ( dBm ) IF Frequency (GHz) IF Frequency (GHz) Ref. : DSCHM12912266 - 23-Sept.-02 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 25-32GHz SSB Mixer Chip Assembly and Mechanical Data CHM1291 Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended Bonding pad positions ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : DSCHM12912266 - 23-Sept.-02 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHM1291 Ordering Information Chip form : CHM1291-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHM12912266 - 23-Sept.-02 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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